High-temperature operation of Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage
Abstract In this work, we report the reduced gate leakage current by using aluminum oxide (Al 2 O 3 ) and gallium oxide (Ga 2 O 3 ) as a bi-layer gate stack for GaN MOS-HEMT on a silicon substrate up to 450 °C. The bi-layer gate stack MOS-HEMTs suppressed the gate leakage by more than four orders of magnitude compared to only Al 2 O 3 -based GaN MOS-HEMT at 450 °C. The low gate leakage current is attributed to the reduced oxygen vacancies present in the Ga 2 O 3 layer, which effectively impede the conduction path of the Poole-Frenkel emission at high temperatures, thereby enhancing the overall performance of GaN HEMTs.
Authors
- Dhanu Chettri (ORCID: https://orcid.org/0000-0002-3681-5952)
- Ganesh Mainali (ORCID: https://orcid.org/0009-0005-9850-4999)
- Haicheng Cao (ORCID: https://orcid.org/0000-0001-5646-0231)
- Xiao Tang (ORCID: https://orcid.org/0000-0002-0138-7206)
- Vishal Khandelwal (ORCID: https://orcid.org/0000-0003-1759-1209)
- Mritunjay Kumar (ORCID: https://orcid.org/0000-0003-3677-182X)
- Saravanan Yuvaraja (ORCID: https://orcid.org/0000-0001-9187-0543)
- Xiaohang Li (ORCID: https://orcid.org/0000-0002-4434-365X)
Institutions
- King Abdullah University of Science and Technology (SA)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2024-10-01
- DOI
- https://doi.org/10.35848/1347-4065/ad8714
- Citations
- 6
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.71
Funders
- King Abdullah University of Science and Technology