Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction

The band offsets of semiconductor heterojunctions are critical parameters for the design of electronic and optoelectronic devices. In this work, we report the fabrication of a Co3O4/3C-SiC p-n heterojunction and the determination of the conduction band and valence band offsets at the Co3O4/3C-SiC heterojunction. Our results reveal that the Co3O4/3C-SiC p-n heterojunction exhibits a type-II band alignment, with a conduction band offset of 0.75 eV and a valence band offset of 0.96 eV. These experimental findings are crucial for the design and development of 3C-SiC devices for electronic and optoelectronic applications.