Computational study of cathode plasma dynamics in high-power electron beam diodes by particle-in-cell simulations

Plasma dynamics are essential in high-power electron beam diodes, as they influence the current density and can even cause gap closure because of fast expansion velocity during operation. In this study, the formation and expansion of the cathode plasma in a high-power planar diode has been investigated by particle-in-cell simulations. The results indicate that the expansion velocity of the cathode plasma in the planar diode is ∼2.5 cm/μs operating with a 340 kV peak voltage and 1.5 kA current, which possesses a maximum pressure of 1 Torr pressure and a gas desorption rate of 38 molecules per electron. Moreover, the enhanced emission on the edge causes a faster growth rate of the gas pressure and formation of plasma, which possesses a higher plasma density than other regions. A higher gas desorption rate and total amount of outgoing gas can cause a larger velocity of plasma expansion, and the expansion velocity is proportional to the logarithm of the rising speed of the diode voltage, while the amplitude of diode voltage did not show a clear correlation with plasma velocity. Finally, a combined dependence of the plasma velocity on the gas desorption rate, total gas volume, rising speed of the diode voltage, and diode voltage is concluded. This work provides new insights into the dynamics of cathode plasma in high-power diodes and may be helpful for engineering design.