Effect of oxidation times on Gas sensitivity and characterization for (In₂O₃) thin films produced by thermal evaporated

Abstract thin films were prepared by the thermal evaporated method of Indium metal on a glass substrate, then conventional oxides in the presence of O 2 at 400° C. The indium thin films have a thickness of 400nm and different oxidation times (60, 90, and 120) min. The findings from X-ray diffraction (XRD) pertain to the polycrystalline phase. The films (In2O3) had a polycrystalline cubic structure The films have prominent peaks that match (112), (222), and (004) planes at 21.448°, 30.515, 35.38 in the order mentioned. Change with increasing oxidation time each of The amounts The text refers to the number of crystallites, the dimensions of the crystallites, the density of dislocations inside the crystallites, and the level of microstrain present in the crystallites. The UV-vis spectra were used to investigate the optical characteristics such as(The transmittance and absorbance spectra, the absorption coefficient (α) and from there, the energy gap was computed. with different times are 3.1,3.3 and 3.05 eV, respectively. The film’s gas sensing performance approaches CO 2 Gas measurements were made at many oxidation times. The performance of the gas detecting system was found to have significantly improved.