Diverse energy laser ablation in liquid for indium oxide nanoparticles on porous silicon: enhancing photodetector performance

Abstract The fabrication and analysis of a photodetector using copper oxide nanoparticles (In2O3-NPs) embedded in a porous silicon (PS) structure are detailed in this study. One method used to create In2O3 NPs was pulsed laser ablation in ethanol (PLAL), while another was photo-assisted electrochemical etching to create a porous silicon substrate. The optical, structural, and electrical features of In2O3-NPs/PS devices are investigated, with a particular emphasis on their variations with laser energy. After successfully applying In2O3 nanoparticles onto PS, the X-ray diffraction analysis revealed the presence of distinct peaks that correlate to a copper cubic structure. Using field emission scanning electron microscopy, the researchers determined that the particles had a spherical shape. Absorption increased with increasing laser intensity, and the In2O3-nanocolloids showed clear surface plasmon resonance peaks between 570 and 590 nm in wavelength range. Band gaps of 3.5, 3.4, 3.2, and 3.1 eV were found for the In2O3-NPs generated at 500, 600, 700, and 800 mJ of laser energy, according to the optical properties. According to the optoelectronic properties of the In2O3-NPs/PS photodetector, it was built with an energy level of 700 mJ and had a maximum responsivity of 0.2766 A/W at 650 nm. The In2O3NPs/PS devices discussed in this study have excellent photodetecting performance because they integrate In2O3-NPs with PS.