Perovskite photodetectors with regulated band alignment engineering by bridging molecules

With the rapid development of Internet of Things (IoT) and artificial intelligence (AI) technologies, the field of information technology is gradually moving towards the era of optical information processing. Photodetectors convert optical signals into electrical signals, and due to their superior optoelectronic properties, perovskite has become a promising candidate for the next generation of high-speed photodetectors. However, achieving high device efficiency requires the manufacture of perovskite thin films with fewer defects and high carrier extraction capability. Here, we propose that by finely controlling the transport layer and perovskite layer, favorable band bending has been achieved, series resistance has been reduced, and carrier separation has been enhanced. Therefore, the integrated 2Br-POOH-TFHV co processing method achieved a dark current of less than 1X10^-9 a and a response speed of less than 30 ns. In summary, this study proposes a new method for manufacturing high-speed photodiodes.