Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO3 Thin-Film Memristor
In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol-gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of -1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of -0.45 V/+1.55 V presented a memory window larger than 10<sup>3</sup>, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.
Authors
- Ke-Jing Lee (ORCID: https://orcid.org/0000-0001-6607-5759)
- Na-Fu Wang (ORCID: https://orcid.org/0000-0003-3027-0506)
- Cheng-Jung Lee (ORCID: https://orcid.org/0000-0003-2090-080X)
- Yeong‐Her Wang (ORCID: https://orcid.org/0000-0003-3796-923X)
- Cheng-Hua Wu
- Dei-Wei Chou
Institutions
- National Cheng Kung University (TW)
- Cheng Shiu University (TW)
Publication Details
- Journal
- Materials
- Published
- 2024-10-14
- DOI
- https://doi.org/10.3390/ma17205021
- Citations
- 2
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- National Science Council
- National Science and Technology Council