65nm CMOS Charge Pump Powered Driver for Flyback GaN Power Switch

This paper proposes a manufactured integrated design of doubly-stacked transistor driver for GaN power switch used in flyback converter. The driver is powered by a cross-coupled charge pump, which converts the input voltage of 1.5 V to 5 V at its output. The proposed driver circuit is a part of integrated controller for discrete flyback converter, which produces 3.3 V output voltage from 325 V at its input. The whole design uses transistors with nominal voltage of 2.5 V at most. The driving voltage of 5 V is achieved using transistor stacking technique. The verification results provided in this paper are simulation based, considering temperature and process variations.