808 nm Laser Power Converters for Simultaneous Wireless Information and Power Transfer

808 nm ten-junction laser power converters (LPCs) with different areas were designed and grown by metal-organic chemical vapor deposition. The I–V characteristics of the chips under three different testing conditions were compared to reveal the effect of heat accumulation on the performance of the LPCs. At the same time, the chip size effect was studied. In addition, the temperature of the LPCs was estimated based on its linear relationship with open-circuit voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub>). Finally, the experiment of simultaneous wireless information and power transfer (SWIPT) was conducted to study the limitations on the performance of SWIPT based on the laser. A power transmission of 1.59 W and a data transmission rate of 200 kbit/s was achieved simultaneously.