A Balanced Power Amplifier With Complementary Adaptive Bias in 28-nm Bulk CMOS for 5G Millimeter-Wave Systems

This brief presents a balanced power amplifier (BPA) with adaptive-bias for 5G applications based on 28-nm bulk CMOS process. The PA utilizes a differential balanced structure which cancels out reflected signals at the isolation ports, thereby improving return losses. A folded differential quadrature coupler is designed to connect respectively to the input and output of the PAs. The folded layout effectively reduces the chip size. In addition, a complementary adaptive bias is implemented to cancel out the nonlinear effects of the two PAs, significantly enhancing the overall linearity. The measure PA realizes a 3-dB bandwidth of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$21.3\sim 28$ </tex-math></inline-formula>.4 GHz with a peak gain of 21.1 dB. The large-signal measurement results show that the PA achieve an OP1dB of 20.3 dBm, a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\mathrm { sat}}$ </tex-math></inline-formula> of 21.6 dBm, and a peak PAE (PAEmax) of 30.9%. The measured |AM-PM|P1dB is less than 8.9°, which is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3\sim 8^{\circ }$ </tex-math></inline-formula> lower than when using a normal bias. For 5G NR FR2 200-MHz 64QAM signals, the measured <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\mathrm { avg}}$ </tex-math></inline-formula> / <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm { PAE}}_{\mathrm { avg}}$ </tex-math></inline-formula> / ACPR of 11.2 dBm / 6% / –24.9 dBc are achieved at the EVM of –25 dB. The DC power supply voltage is 1.8 V. The core chip size is only 0.27 mm2, demonstrating a compact design within a balanced architecture.

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Publication Details

Journal
IEEE Transactions on Circuits & Systems II Express Briefs
Published
2024-10-14
DOI
https://doi.org/10.1109/tcsii.2024.3480706
Citations
4
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.83
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article

A Balanced Power Amplifier With Complementary Adaptive Bias in 28-nm Bulk CMOS for 5G Millimeter-Wave Systems

Ning-Zheng Sun, Li Gao, Xiu Yin Zhang, Weisen Zeng et al.
4 citations
IEEE Transactions on Circuits & Systems II Express Briefs
Radio Frequency Integrated Circuit Design
0.83
article

A Balanced Power Amplifier With Complementary Adaptive Bias in 28-nm Bulk CMOS for 5G Millimeter-Wave Systems

Ning-Zheng Sun, Li Gao, Xiu Yin Zhang, Weisen Zeng, Xinyang Liu, Jie Hu
article en
4 citations

Abstract

This brief presents a balanced power amplifier (BPA) with adaptive-bias for 5G applications based on 28-nm bulk CMOS process. The PA utilizes a differential balanced structure which cancels out reflected signals at the isolation ports, thereby improving return losses. A folded differential quadrature coupler is designed to connect respectively to the input and output of the PAs. The folded layout effectively reduces the chip size. In addition, a complementary adaptive bias is implemented to cancel out the nonlinear effects of the two PAs, significantly enhancing the overall linearity. The measure PA realizes a 3-dB bandwidth of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$21.3\sim 28$ </tex-math></inline-formula>.4 GHz with a peak gain of 21.1 dB. The large-signal measurement results show that the PA achieve an OP1dB of 20.3 dBm, a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\mathrm { sat}}$ </tex-math></inline-formula> of 21.6 dBm, and a peak PAE (PAEmax) of 30.9%. The measured |AM-PM|P1dB is less than 8.9°, which is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3\sim 8^{\circ }$ </tex-math></inline-formula> lower than when using a normal bias. For 5G NR FR2 200-MHz 64QAM signals, the measured <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\mathrm { avg}}$ </tex-math></inline-formula> / <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm { PAE}}_{\mathrm { avg}}$ </tex-math></inline-formula> / ACPR of 11.2 dBm / 6% / –24.9 dBc are achieved at the EVM of –25 dB. The DC power supply voltage is 1.8 V. The core chip size is only 0.27 mm2, demonstrating a compact design within a balanced architecture.

IEEE Transactions on Circuits & Systems II Express BriefsVol. 72(1)
South China University of Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 26%
Radio Frequency Integrated Circuit Design
0.83
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