<i>W</i>-Band Compact Triple-Mode Bandpass Filter Using Multistub Resonator in 65-nm CMOS Technology

This letter presents a novel W-band compact wideband triple-mode bandpass filter (BPF) using multistub resonator. The resonator is loaded both by T-shaped stepped impedance stub (TSIS) and symmetrical open stub pair (SOSP) to generate three resonant modes and two transmission zeros for improving the bandwidth and enhancing the stopband rejection ability. Moreover, the characteristic admittance ratio has the ability to flexibly adjust the bandwidth and the transmission zero. The proposed BPF is fabricated in 65-nm CMOS technology with a core area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$444\times 192~\mu $ </tex-math></inline-formula>m2. The measurement results show that the 3-dB bandwidth is 30.7 GHz at the center frequency of 94 GHz, the minimum insertion loss is 4.3 dB, and the stopband rejection is better than 20 dB.

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Publication Details

Journal
IEEE Microwave and Wireless Technology Letters
Published
2024-10-14
DOI
https://doi.org/10.1109/lmwt.2024.3472218
Citations
9
Primary Topic
Microwave Engineering and Waveguides
Type
article
Field-Weighted Citation Impact
1.88

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W-Band Compact Triple-Mode Bandpass Filter Using Multistub Resonator in 65-nm CMOS Technology

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IEEE Microwave and Wireless Technology Letters
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article

W-Band Compact Triple-Mode Bandpass Filter Using Multistub Resonator in 65-nm CMOS Technology

Jiawei Sun, Zhangming Zhu, Hao Zhang, Tao Zhang, Qijun Lu
article en
9 citations

Abstract

This letter presents a novel W-band compact wideband triple-mode bandpass filter (BPF) using multistub resonator. The resonator is loaded both by T-shaped stepped impedance stub (TSIS) and symmetrical open stub pair (SOSP) to generate three resonant modes and two transmission zeros for improving the bandwidth and enhancing the stopband rejection ability. Moreover, the characteristic admittance ratio has the ability to flexibly adjust the bandwidth and the transmission zero. The proposed BPF is fabricated in 65-nm CMOS technology with a core area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$444\times 192~\mu $ </tex-math></inline-formula>m2. The measurement results show that the 3-dB bandwidth is 30.7 GHz at the center frequency of 94 GHz, the minimum insertion loss is 4.3 dB, and the stopband rejection is better than 20 dB.

IEEE Microwave and Wireless Technology LettersVol. 34(12)
Xidian University (CN), Institute of Electronics (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 14%
Microwave Engineering and Waveguides
1.88
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