Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

Abstract In this paper, we investigate the optical properties of a zincblende InGaN single quantum well (SQW) structure containing stacking faults (SFs). Cathodoluminescence studies revealed the presence of sharp emission features adjacent to SFs, identified as quantum wires (Qwire) via their spatial anisotropy. Scanning transmission electron microscopy provided evidence of indium rich regions adjacent to SFs which intersect the QW along the [110] and [1–10] directions, whilst atom probe tomography revealed that the indium rich regions have an elongated structure, creating a Qwire. This work sheds light on the intricate relationship between SFs and Qwires in zincblende InGaN SQW structures, offering insights into the underlying mechanisms governing their optical behavior.

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Publication Details

Journal
Journal of Physics D Applied Physics
Published
2024-10-14
DOI
https://doi.org/10.1088/1361-6463/ad8662
Citations
3
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.93

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article

Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

Abhiram Gundimeda, Huixin Xiu, Menno J. Kappers, D. J. Wallis et al.
3 citations
Journal of Physics D Applied Physics
GaN-based semiconductor devices and materials
0.93
article

Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

Abhiram Gundimeda, Huixin Xiu, Menno J. Kappers, D. J. Wallis, Gunnar Kusch, Christina Hofer, Ruiying Shu, Paul A.J. Bagot, Michael P. Moody, Martin Frentrup, Rachel A. Oliver
article en
3 citations

Abstract

Abstract In this paper, we investigate the optical properties of a zincblende InGaN single quantum well (SQW) structure containing stacking faults (SFs). Cathodoluminescence studies revealed the presence of sharp emission features adjacent to SFs, identified as quantum wires (Qwire) via their spatial anisotropy. Scanning transmission electron microscopy provided evidence of indium rich regions adjacent to SFs which intersect the QW along the [110] and [1–10] directions, whilst atom probe tomography revealed that the indium rich regions have an elongated structure, creating a Qwire. This work sheds light on the intricate relationship between SFs and Qwires in zincblende InGaN SQW structures, offering insights into the underlying mechanisms governing their optical behavior.

Journal of Physics D Applied PhysicsVol. 58(2)
University of Shanghai for Science and Technology (CN), University of Cambridge (GB), University of Oxford (GB), Cardiff University (GB)
Beyond Blue, Engineering and Physical Sciences Research Council, Innovate UK
Openalex Percentile: Top 26%
GaN-based semiconductor devices and materials
0.93
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