Pushing the Thickness Limit of the Giant Rashba Effect in Ferroelectric Semiconductor GeTe

Ferroelectric Rashba semiconductors (FERSCs) such as α-GeTe are promising candidates for energy-efficient information technologies exploiting spin-orbit coupling (SOC) and are termed spin-orbitronics. In this work, the thickness limit of the Rashba-SOC effect in α-GeTe films is investigated. We demonstrate, using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations performed on pristine GeTe, that down to 1 nm, GeTe(111) films on a Sb-covered Si(111) substrate continuously exhibit a giant Rashba effect characterized, at 1 nm, by a constant of 5.2 ± 0.5 eV·Å. X-ray photoemission spectroscopy (XPS) allows the understanding of the persistence of the Rashba effect by evidencing a compensation of Ge vacancy defects resulting from the insertion of Sb interfacial atoms in the early stage growth of the GeTe(111) films.

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Publication Details

Journal
Nano Letters
Published
2024-10-14
DOI
https://doi.org/10.1021/acs.nanolett.4c03281
Citations
7
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
2.36

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article

Pushing the Thickness Limit of the Giant Rashba Effect in Ferroelectric Semiconductor GeTe

Y. Fagot‐Révurat, Stefano Curiotto, Boris Croes, Bodry Tegomo Chiogo et al.
7 citations
Nano Letters
Topological Materials and Phenomena
2.36
article

Pushing the Thickness Limit of the Giant Rashba Effect in Ferroelectric Semiconductor GeTe

Y. Fagot‐Révurat, Stefano Curiotto, Boris Croes, Bodry Tegomo Chiogo, F. Bertran, Andrés Saúl, Frédéric Leroy, Pierre Müller, Patrick Le Fèvre, Alexandre Llopez, Calvin Tagne-Kaegom, Fabien Cheynis, B. Kierren
article en
7 citations

Abstract

Ferroelectric Rashba semiconductors (FERSCs) such as α-GeTe are promising candidates for energy-efficient information technologies exploiting spin-orbit coupling (SOC) and are termed spin-orbitronics. In this work, the thickness limit of the Rashba-SOC effect in α-GeTe films is investigated. We demonstrate, using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations performed on pristine GeTe, that down to 1 nm, GeTe(111) films on a Sb-covered Si(111) substrate continuously exhibit a giant Rashba effect characterized, at 1 nm, by a constant of 5.2 ± 0.5 eV·Å. X-ray photoemission spectroscopy (XPS) allows the understanding of the persistence of the Rashba effect by evidencing a compensation of Ge vacancy defects resulting from the insertion of Sb interfacial atoms in the early stage growth of the GeTe(111) films.

Nano LettersVol. 24(42)
Centre National de la Recherche Scientifique (FR), Aix-Marseille Université (FR), Université Paris-Saclay (FR), Synchrotron soleil (FR), Institut de Physique de Rennes (FR), Institut Jean Lamour (FR), Centre Interdisciplinaire de Nanoscience de Marseille (FR), Université de Rennes (FR), Université de Lorraine (FR)
Aix-Marseille Université, Agence Nationale de la Recherche
Openalex Percentile: Top 11%
Topological Materials and Phenomena
2.36
DOIOpen Access PDFOpenAlex
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