Passivation of Deep‐Level Defects through Chemical Environment Regulation for Efficient CZTSSe Solar Cells Based on Active Selenium Adsorption–Desorption Process

Abstract Insufficient selenization and uneven distribution of elements caused by the poor diffusion and reaction activity of selenium clusters is one of the main issues limiting the efficiency of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. Here, this work designs a simple and feasible strategy to improve the activity of selenium (Se) by implementing high‐temperature treatment on graphite boxes loaded with Se pellets. The rapid adsorption/desorption characteristics of graphite on active gaseous small‐molecule selenium have successfully introduced hyperactive Se 4 , Se 3 , and Se 2 into the selenization process. The results indicate that the adsorbed non‐toxic gaseous active Se 3 and Se 4 can quickly and uniformly diffuse into the precursor film at low temperatures, thereby inducing nucleation and grain growth at both surface and back interface simultaneously, which inhibits the upward migration and aggregation of cations, especially Cu, and promotes the homogenization of elements. The overall relatively Cu‐poor chemical environment suppresses the formation of Cu Zn defects and [2Cu Zn +Sn Zn ] defect clusters, and also promotes the generation of favorable V Cu . The band tail states and non‐radiative recombination are then optimized. Finally, the CZTSSe solar cells achieve a power conversion efficiency (PCE) of 14.5%, with V OC / V OC SQ of 67% being one of the highest in the literature.

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Publication Details

Journal
Advanced Functional Materials
Published
2024-10-13
DOI
https://doi.org/10.1002/adfm.202414940
Citations
17
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
3.55

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article

Passivation of Deep‐Level Defects through Chemical Environment Regulation for Efficient CZTSSe Solar Cells Based on Active Selenium Adsorption–Desorption Process

JinJin Chi, Litao Han, Yafang Qi, Sixin Wu et al.
17 citations
Advanced Functional Materials
Chalcogenide Semiconductor Thin Films
3.55
article

Passivation of Deep‐Level Defects through Chemical Environment Regulation for Efficient CZTSSe Solar Cells Based on Active Selenium Adsorption–Desorption Process

JinJin Chi, Litao Han, Yafang Qi, Sixin Wu, Dongxing Kou, Shengjie Yuan, Liangli Chu, Yue Jian, Tianliang Xie, Tong Liu, Wenhui Zhou, Minwoo Han, Xinyi Zhong, Yuena Meng, Zhengji Zhou
article en
17 citations

Abstract

Abstract Insufficient selenization and uneven distribution of elements caused by the poor diffusion and reaction activity of selenium clusters is one of the main issues limiting the efficiency of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. Here, this work designs a simple and feasible strategy to improve the activity of selenium (Se) by implementing high‐temperature treatment on graphite boxes loaded with Se pellets. The rapid adsorption/desorption characteristics of graphite on active gaseous small‐molecule selenium have successfully introduced hyperactive Se 4 , Se 3 , and Se 2 into the selenization process. The results indicate that the adsorbed non‐toxic gaseous active Se 3 and Se 4 can quickly and uniformly diffuse into the precursor film at low temperatures, thereby inducing nucleation and grain growth at both surface and back interface simultaneously, which inhibits the upward migration and aggregation of cations, especially Cu, and promotes the homogenization of elements. The overall relatively Cu‐poor chemical environment suppresses the formation of Cu Zn defects and [2Cu Zn +Sn Zn ] defect clusters, and also promotes the generation of favorable V Cu . The band tail states and non‐radiative recombination are then optimized. Finally, the CZTSSe solar cells achieve a power conversion efficiency (PCE) of 14.5%, with V OC / V OC SQ of 67% being one of the highest in the literature.

Advanced Functional MaterialsVol. 35(9)
Henan University (CN), Shenzhen University (CN), Nanjing University of Aeronautics and Astronautics (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 7%
Chalcogenide Semiconductor Thin Films
3.55
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