Mixed‐mode SNN crossbar array with embedded dummy switch and mid‐node pre‐charge scheme

Abstract This paper presents a membrane computation error‐minimized mixed‐mode spiking neural network (SNN) crossbar array. Our approach involves implementing an embedded dummy switch scheme and a mid‐node pre‐charge scheme to construct a high‐precision current‐mode synapse. We effectively suppressed charge sharing between membrane capacitors and the parasitic capacitance of synapses that results in membrane computation error. A 400 × 20 SNN crossbar prototype chip is fabricated via a 28‐nm FDSOI CMOS process, and 20 MNIST patterns with their sizes reduced to 20 × 20 pixels are successfully recognized under 411 μW of power consumed. Moreover, the peak‐to‐peak deviation of the normalized output spike count measured from the 21 fabricated SNN prototype chips is within 16.5% from the ideal value, including sample‐wise random variations.

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Publication Details

Journal
ETRI Journal
Published
2024-10-01
DOI
https://doi.org/10.4218/etrij.2024-0120
Citations
2
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.42

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article

Mixed‐mode SNN crossbar array with embedded dummy switch and mid‐node pre‐charge scheme

Jae‐Jin Lee, Byung‐Do Yang, Taewook Kang, Kwang‐Il Oh et al.
2 citations
ETRI Journal
Radio Frequency Integrated Circuit Design
0.42
article

Mixed‐mode SNN crossbar array with embedded dummy switch and mid‐node pre‐charge scheme

Jae‐Jin Lee, Byung‐Do Yang, Taewook Kang, Kwang‐Il Oh, Sung‐Eun Kim, Hyuk Kim
article en
2 citations

Abstract

Abstract This paper presents a membrane computation error‐minimized mixed‐mode spiking neural network (SNN) crossbar array. Our approach involves implementing an embedded dummy switch scheme and a mid‐node pre‐charge scheme to construct a high‐precision current‐mode synapse. We effectively suppressed charge sharing between membrane capacitors and the parasitic capacitance of synapses that results in membrane computation error. A 400 × 20 SNN crossbar prototype chip is fabricated via a 28‐nm FDSOI CMOS process, and 20 MNIST patterns with their sizes reduced to 20 × 20 pixels are successfully recognized under 411 μW of power consumed. Moreover, the peak‐to‐peak deviation of the normalized output spike count measured from the 21 fabricated SNN prototype chips is within 16.5% from the ideal value, including sample‐wise random variations.

ETRI JournalVol. 46(5)
Electronics and Telecommunications Research Institute (KR), Chungbuk National University (KR)
Electronics and Telecommunications Research Institute
Openalex Percentile: Top 37%
Radio Frequency Integrated Circuit Design
0.42
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