Faster and Safer “In situ” Synthesis of Germanane and Silicane

Germanane (GeH) and silicane (SiH), members of the Xanes family, have garnered significant attention as 2D materials due to their diverse properties, which hold promise for applications in electronics, optoelectronics, energy storage, and sensing. Typically, highly concentrated hydrochloric acid (HCl) or hydrofluoric acid (HF) is employed in the synthesis of these Xanes, but both routes are problematic due to slow kinetics and safety concerns, respectively. Here for the first time, a faster and safer method is demonstrated for Xanes synthesis that harnesses the generation of HF "in situ" using a solution of HCl and lithium fluoride (LiF) salt, overcoming the key challenges of the conventional methods. A variety of characterization techniques to establish a baseline is utilized for both Xanes and to provide a holistic knowledge regarding this method, the possible consequences of this approach, and the possibility of applying it to other layered Zintl phases. The novel synthesis protocol results in high-quality GeH and SiH with bandgaps (E_g) of 1.75 and 2.47 eV respectively, highlighting their potential suitability for integration into semiconductor applications.