Transition-Metal-Related Quantum Emitters in Wurtzite AlN and GaN

Transition-metal centers exhibit a paramagnetic ground state in wide-bandgap semiconductors and are promising for nanophotonics and quantum information processing. Specifically, there is a growing interest in discovering prominent paramagnetic spin defects that can be manipulated using optical methods. Here, we investigate the electronic structure and magneto-optical properties of Cr and Mn substitutional centers in wurtzite AlN and GaN. We use state-of-the-art hybrid density functional theory calculations to determine level structure, stability, optical signatures, and magnetic properties of these centers. The excitation energies are calculated using the constrained occupation approach and rigorously verified with the complete active space configuration interaction approach. Our simulations of the photoluminescence spectra indicate that <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Cr</mml:mi></mml:mrow><mml:mrow><mml:mi>Al</mml:mi></mml:mrow><mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math> in AlN and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Cr</mml:mi></mml:mrow><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math> in GaN are responsible for the observed narrow quantum emission near 1.2 eV. We compute the zero-field splitting (ZFS) parameters and outline an optical spin polarization protocol for <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Cr</mml:mi></mml:mrow><mml:mrow><mml:mi>Al</mml:mi></mml:mrow><mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Cr</mml:mi></mml:mrow><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math>. Our results demonstrate that these centers are promising candidates for spin qubits.

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Publication Details

Journal
ACS Nano
Published
2024-10-12
DOI
https://doi.org/10.1021/acsnano.4c07184
Citations
10
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
3.11

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article

Transition-Metal-Related Quantum Emitters in Wurtzite AlN and GaN

Chris G. Van de Walle, Sai Mu, Aleksei Koshevarnikov, Kamil Czelej et al.
10 citations
ACS Nano
GaN-based semiconductor devices and materials
3.11
article

Transition-Metal-Related Quantum Emitters in Wurtzite AlN and GaN

Chris G. Van de Walle, Sai Mu, Aleksei Koshevarnikov, Kamil Czelej, Mark E. Turiansky, M. Rey Lambert
article en
10 citations

Abstract

Transition-metal centers exhibit a paramagnetic ground state in wide-bandgap semiconductors and are promising for nanophotonics and quantum information processing. Specifically, there is a growing interest in discovering prominent paramagnetic spin defects that can be manipulated using optical methods. Here, we investigate the electronic structure and magneto-optical properties of Cr and Mn substitutional centers in wurtzite AlN and GaN. We use state-of-the-art hybrid density functional theory calculations to determine level structure, stability, optical signatures, and magnetic properties of these centers. The excitation energies are calculated using the constrained occupation approach and rigorously verified with the complete active space configuration interaction approach. Our simulations of the photoluminescence spectra indicate that <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Cr</mml:mi></mml:mrow><mml:mrow><mml:mi>Al</mml:mi></mml:mrow><mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math> in AlN and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Cr</mml:mi></mml:mrow><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math> in GaN are responsible for the observed narrow quantum emission near 1.2 eV. We compute the zero-field splitting (ZFS) parameters and outline an optical spin polarization protocol for <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Cr</mml:mi></mml:mrow><mml:mrow><mml:mi>Al</mml:mi></mml:mrow><mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mrow><mml:mi>Cr</mml:mi></mml:mrow><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mrow><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:mrow></mml:msubsup></mml:math>. Our results demonstrate that these centers are promising candidates for spin qubits.

ACS NanoVol. 18(42)
Warsaw University of Technology (PL), University of California, Santa Barbara (US), University of South Carolina (US), Institute of Organic Chemistry (PL), University of Warsaw (PL), Polish Academy of Sciences (PL)
U.S. Department of Energy, National Energy Research Scientific Computing Center, Narodowe Centrum Nauki, Uniwersytet Warszawski, Office of Science, Office of Naval Research
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GaN-based semiconductor devices and materials
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