Ultra-High-Efficiency Solar Capture Device Based on InAs Top Microstructure

Research on how to efficiently utilize solar energy can effectively address the current situation where excessive carbon emissions threaten the natural environment. The solar capture device, as the core component of the solar thermal photovoltaic system, can significantly enhance the absorption properties of the solar thermal photovoltaic system, which is of high research value in the solar energy application area. In this paper, a metamaterial broadband solar capture device based on the top microstructure of semiconductor InAs material is proposed. The model is fabricated from top to bottom with the semiconductor InAs material at the top with Ti material to make hollow cylindrical microstructures, and a combination of SiO2 material film, Ti material film, and Cu material film as the substrate. In addition to incorporating the properties of metamaterials, the model is also inspired by the quantum-limited domain effect of nano-semiconductors by using the incorporation of InAs top microstructures at the top to further improve the model’s absorption properties. The model was calculated to have an average absorption in the 280–2500 nm waveband of 96.15% and a weighted average absorption in the 280–4000 nm waveband of 97.71% at AM1.5. Results of calculating the model’s reflectivity in the 280–20,000 nm bands show that the reflectivity of the model is higher than 80% in all the bands after the wavelength of 7940 nm, so the model has a certain spectral selectivity. In addition, the thermal radiation efficiency of the model in the 280–2500 nm waveband, when it is used as a thermal emitter, is calculated to reach 94.40% in this paper. Meanwhile, the capture device has good angular insensitivity, which has high potential for practical applications.