Demonstration of high-frequency self-pulsing oscillations in an active silicon micro-ring cavity

We experimentally investigated the self-pulsing (SP) oscillations induced by the thermo-optic, free carrier, and Kerr nonlinear effects in integrated active silicon microring resonators. We demonstrate high frequency self-pulsing oscillations (up to 30 MHz) by applying a few millivolts of reverse bias voltage to the PIN junction of the active cavity. We illustrate that the shape of those oscillations (i.e., frequency and duty cycle) can be controlled by adjusting the CW input power and applying a reverse bias voltage to the PIN junction for carrier removal. This controlling is important for synchronizing the cavity which is crucial for neural network applications. Furthermore, we utilize a mathematical model for visualizing the stability regions by numerically studying coupled mode theory in silicon microcavity under different conditions.

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Publication Details

Journal
Scientific Reports
Published
2024-10-11
DOI
https://doi.org/10.1038/s41598-024-75295-3
Citations
11
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
2.30

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article

Demonstration of high-frequency self-pulsing oscillations in an active silicon micro-ring cavity

Mircea Cătuneanu, Kambiz Jamshidi, Menglong He, Abdou Shetewy
11 citations
Scientific Reports
Photonic and Optical Devices
2.30
article

Demonstration of high-frequency self-pulsing oscillations in an active silicon micro-ring cavity

Mircea Cătuneanu, Kambiz Jamshidi, Menglong He, Abdou Shetewy
article en
11 citations

Abstract

We experimentally investigated the self-pulsing (SP) oscillations induced by the thermo-optic, free carrier, and Kerr nonlinear effects in integrated active silicon microring resonators. We demonstrate high frequency self-pulsing oscillations (up to 30 MHz) by applying a few millivolts of reverse bias voltage to the PIN junction of the active cavity. We illustrate that the shape of those oscillations (i.e., frequency and duty cycle) can be controlled by adjusting the CW input power and applying a reverse bias voltage to the PIN junction for carrier removal. This controlling is important for synchronizing the cavity which is crucial for neural network applications. Furthermore, we utilize a mathematical model for visualizing the stability regions by numerically studying coupled mode theory in silicon microcavity under different conditions.

Scientific ReportsVol. 14(1)
Technische Universität Dresden (DE)
Massachusetts Institute of Technology, Deutsche Forschungsgemeinschaft, Bundesministerium für Bildung und Forschung, Technische Universität Dresden
Affordable and clean energy
Openalex Percentile: Top 11%
Photonic and Optical Devices
2.30
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