Single-mode surface grating semiconductor laser fabricated by i-line projection photolithography
The study presents the design, fabrication, and testing of the 4th-order surface grating laser with a focus on achieving stable single-mode emission. This approach contrasts with traditional high-order surface gratings, aiming to minimize loss and enhance the yield of single-mode operations. The laser device showcases a remarkable single-mode performance, with an injection current of I<sub>FP</sub> = 57 mA and I<sub>Grating</sub> = 20 mA, achieving a side mode suppression ratio of 56.97 dB. The threshold current remains around 11 mA, reaching a peak power output of 5 mW. The experimental results highlight the potential of using low-order surface gratings for efficient single-mode lasers, streamlining the fabrication process while enhancing device performance.
Authors
- Yue‐De Yang (ORCID: https://orcid.org/0000-0002-6237-2921)
- Yong‐Zhen Huang (ORCID: https://orcid.org/0000-0002-0529-4947)
- Jin‐Long Xiao (ORCID: https://orcid.org/0000-0002-4770-2697)
- Bi-Wei Hu
Institutions
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Published
- 2024-10-11
- DOI
- https://doi.org/10.1117/12.3035818
- Primary Topic
- Optical Coatings and Gratings
- Type
- article
- Field-Weighted Citation Impact
- 0.00