Interfacial Strain-Insensitive Thermal and Electrical Stability of (K,Na)NbO<sub>3</sub>-Based Lead-Free Ferroelectric Films

Despite the inherent strain relaxation in perovskite-type oxide ferroelectric films that occurs beyond a certain thickness, the interfacial states, including carrier and strain, can still influence their electrical properties. This study explores the impact of different (La0.67,Sr0.33)MnO3 (LSMO)-coated perovskite-type oxide substrates on the electrical performance of (K,Na)NbO3 (KNN)-based ferroelectric films. Specifically, 200 nm-thick epitaxial KNN-based films were grown on four distinct substrates: (001)-oriented KTaO3, SrTiO3, LaAlO3, and YAlO3. Notably, the lattice constants of the KNN-based films remained unchanged, despite the varying lattice constants of their substrates. The electrical properties of these films were found to be insensitive to the underlying substrate. All films displayed comparable hysteresis loops and frequency-dependent dielectric curves, with a consistent remnant polarization of ∼63 μC/cm2 and a dielectric constant of ∼1250 at 1 kHz. Furthermore, the KNN-based films demonstrated exceptional thermal stability. They showed resilience under multiple switching cycles and maintained stable ferroelectricity up to a high temperature of 100 °C. These observations underscore the high electrical and thermal stability of KNN-based ferroelectric films, suggesting their promising potential for applications in electronic devices. This research highlights the robustness and versatility of KNN-based ferroelectric films, which could pave the way for their integration into advanced electronic technologies.

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Publication Details

Journal
The Journal of Physical Chemistry C
Published
2024-10-11
DOI
https://doi.org/10.1021/acs.jpcc.4c03280
Citations
1
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.12

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article

Interfacial Strain-Insensitive Thermal and Electrical Stability of (K,Na)NbO3-Based Lead-Free Ferroelectric Films

Ke Wang, Pingfan Chen, Beibei Zhu, Liqiang Xu et al.
1 citations
The Journal of Physical Chemistry C
Ferroelectric and Piezoelectric Materials
0.12
article

Interfacial Strain-Insensitive Thermal and Electrical Stability of (K,Na)NbO3-Based Lead-Free Ferroelectric Films

Ke Wang, Pingfan Chen, Beibei Zhu, Liqiang Xu, Zhengyang Kong, Zhen Huang, Feng Chen, Haibo Zhang, Wenbin Wu, Junya Wang, Kun Han, Hexuan Cheng
article en
1 citations

Abstract

Despite the inherent strain relaxation in perovskite-type oxide ferroelectric films that occurs beyond a certain thickness, the interfacial states, including carrier and strain, can still influence their electrical properties. This study explores the impact of different (La0.67,Sr0.33)MnO3 (LSMO)-coated perovskite-type oxide substrates on the electrical performance of (K,Na)NbO3 (KNN)-based ferroelectric films. Specifically, 200 nm-thick epitaxial KNN-based films were grown on four distinct substrates: (001)-oriented KTaO3, SrTiO3, LaAlO3, and YAlO3. Notably, the lattice constants of the KNN-based films remained unchanged, despite the varying lattice constants of their substrates. The electrical properties of these films were found to be insensitive to the underlying substrate. All films displayed comparable hysteresis loops and frequency-dependent dielectric curves, with a consistent remnant polarization of ∼63 μC/cm2 and a dielectric constant of ∼1250 at 1 kHz. Furthermore, the KNN-based films demonstrated exceptional thermal stability. They showed resilience under multiple switching cycles and maintained stable ferroelectricity up to a high temperature of 100 °C. These observations underscore the high electrical and thermal stability of KNN-based ferroelectric films, suggesting their promising potential for applications in electronic devices. This research highlights the robustness and versatility of KNN-based ferroelectric films, which could pave the way for their integration into advanced electronic technologies.

The Journal of Physical Chemistry CVol. 128(42)
University of Science and Technology of China (CN), Anhui University (CN), Chinese Academy of Sciences (CN), Hefei Institutes of Physical Science (CN), High Magnetic Field Laboratory (CN), Hefei National Center for Physical Sciences at Nanoscale (CN), State Key Laboratory of New Ceramics and Fine Processing, Huazhong University of Science and Technology (CN), Tsinghua University (CN)
National Natural Science Foundation of China, University Natural Science Research Project of Anhui Province
Openalex Percentile: Top 59%
Ferroelectric and Piezoelectric Materials
0.12
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