Measurement of 13.5nm 2%BW in-band EUV power based on HCT-DPP source

The technical route of EUV light sources is divided into two routes. One is high power sources for high volume production, and the other is low for in-house metrology and performance studies on EUV-mask-blanks, EUV masks, and photoresists. This research focuses on the second technical route and concentrates on photoresist inspection. The current mainstream industrial applications include AIXUV’s EUV-LAMP, EUV-Tube from Phoenix EUV and Energetiq’s Electrodeless EQ-10 source. Our research is similar to AIXUV’s EUV-LAMP, which uses the Hollow Cathode cathode-triggered DPP-EUV source. Since the research is in its infancy, the achievement of various indicators of the light source is unidentified. To characterize the source’s in-band power (13.5nm 2% bandwidth), a power measurement based on a zirconium membrane filter, a Mo/Si multilayer mirror, and an EUV photodetector is proposed. At Xenon flow rate of 2.5 sccm, with pressure in the discharge chamber of few pascals, charge voltage of 3 kV, and a repetition frequency of 100 Hz, the 2%BW in-band power measured is above 5 W/4π sr.