Epitaxial p+pn+ vertical short diodes for microbolometers

In the LWIR band, pn diodes are an attractive solution for thermometers in microbolometers. In this paper, epitaxial short p + p n + diodes were studied at 303–343 K. A T C C ranging from 8 %.K − 1 to 3 %.K − 1 between 0.2 V and 0.8 V and a current noise dominated by ficker noise were measured. Finally, at 303 K and an integration time of 40 ms, a thermal resolution ranging from 5.10 − 2 K to 1 . 1 0 − 4 K was obtained for bias currents between 5 . 1 0 − 11 A and 2 . 1 0 − 2 A. • A study of epitaxial short p+pn+ diodes at 303–343 K as a solution for thermometers in microbolometers is presented. • Figures of merit such as the Temperature Coefficient of Current (TCC) and the Power Spectral Density (PSD) of the current noise are measured. • The Power Spectral Density (PSD) of the current noise is dominated by flicker noise and depends on the geometry of the diodes. • IV characteristics of the diodes are compared to TCAD simulations. • Thermal resolutions of the diodes are extracted and compared to previous works.

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Publication Details

Journal
Solid-State Electronics
Published
2025-05-06
DOI
https://doi.org/10.1016/j.sse.2025.109123
Citations
1
Primary Topic
Thermal Radiation and Cooling Technologies
Type
article
Field-Weighted Citation Impact
0.95
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article

Epitaxial p+pn+ vertical short diodes for microbolometers

Francis Balestra
1 citations
Solid-State Electronics
Thermal Radiation and Cooling Technologies
0.95
article

Epitaxial p+pn+ vertical short diodes for microbolometers

Francis Balestra
article en
1 citations

Abstract

In the LWIR band, pn diodes are an attractive solution for thermometers in microbolometers. In this paper, epitaxial short p + p n + diodes were studied at 303–343 K. A T C C ranging from 8 %.K − 1 to 3 %.K − 1 between 0.2 V and 0.8 V and a current noise dominated by ficker noise were measured. Finally, at 303 K and an integration time of 40 ms, a thermal resolution ranging from 5.10 − 2 K to 1 . 1 0 − 4 K was obtained for bias currents between 5 . 1 0 − 11 A and 2 . 1 0 − 2 A. • A study of epitaxial short p+pn+ diodes at 303–343 K as a solution for thermometers in microbolometers is presented. • Figures of merit such as the Temperature Coefficient of Current (TCC) and the Power Spectral Density (PSD) of the current noise are measured. • The Power Spectral Density (PSD) of the current noise is dominated by flicker noise and depends on the geometry of the diodes. • IV characteristics of the diodes are compared to TCAD simulations. • Thermal resolutions of the diodes are extracted and compared to previous works.

Solid-State ElectronicsVol. 228
Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Direction de la Recherche Technologique (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Université Savoie Mont Blanc (FR), Université Grenoble Alpes (FR)
Affordable and clean energy
Openalex Percentile: Top 30%
Thermal Radiation and Cooling Technologies
0.95
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Epitaxial p+pn+ vertical short diodes for microbolometers — Francis Balestra · Solid-State Electronics (2025) | TGRS Research Map | TGRS