Growth and fabrication of GaAs-based InAs/AlSb resonant tunneling diode
With optimized buffer design, we demonstrate a new InAs/AlSb resonant tunneling diode (RTD) on lattice-unmatched semi-insulating (SI) GaAs (100) substrates aiming for terahertz oscillators. To obtain high crystal quality and smooth surface, 5 periods InGaAs/GaAs (2ML/2ML) superlattices (SLs) buffer layer was used as dislocation filters (DFs). Xray diffraction (XRD) measurement showed the full width at half maximum (FWHM) of 331arcsec and surface roughness of 2.4nm over 10μm×10μm. 8-μm-diam diodes were fabricated by standard mesa process. I-V characteristic of the diodes shows negative conductivity at room temperature and a peak current density of 1.79×105A • cm<sup>-2</sup> was achieved.
Authors
- Jianxing Xu (ORCID: https://orcid.org/0000-0002-3723-8480)
- Guowei Wang (ORCID: https://orcid.org/0000-0002-7841-6490)
- Yingqiang Xu (ORCID: https://orcid.org/0000-0001-9331-0670)
- Donghai Wu (ORCID: https://orcid.org/0000-0003-0327-0332)
- Xiangbin Su (ORCID: https://orcid.org/0000-0002-5342-6836)
- Zhichuan Niu (ORCID: https://orcid.org/0000-0002-9566-6635)
- Haiqiao Ni
- Qiuyao Pang
Institutions
- Chinese Academy of Sciences (CN)
- China Academy of Engineering Physics (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Published
- 2024-10-11
- DOI
- https://doi.org/10.1117/12.3038956
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00