Engineering Boron Vacancy Defects in Boron Nitride Nanotubes

Spin defects in hexagonal boron nitride (hBN) are emerging as promising platforms for quantum sensing applications. In particular, the negatively charged boron vacancy (<i>V</i><sub><i>B</i></sub><sup>-</sup>) centers have been engineered in bulk hBN and few-layer hBN flakes, and employed for sensing. Here, we investigate the engineering of <i>V</i><sub><i>B</i></sub><sup>-</sup> spin defects in boron nitride nanotubes (BNNTs). The generated spin defects are distributed along and around the BNNTs. Moreover, in contrast to hBN flakes, the spins in BNNTs exhibit a directional response relative to the direction of a surrounding magnetic field, which is consistent with the tubular geometry. The unique geometry of BNNTs allows for a more controlled and predictable placement of spin defects compared to bulk hBN, paving the way for innovative sensing applications with high spatial resolution and optomechanical studies of spin defects in hBN.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2024-10-11
DOI
https://doi.org/10.1021/acsami.4c12802
Citations
6
Primary Topic
Boron and Carbon Nanomaterials Research
Type
article
Field-Weighted Citation Impact
0.70

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article

Engineering Boron Vacancy Defects in Boron Nitride Nanotubes

Igor Aharonovich, Hiroshi Abe, Priya Singh, David A. Broadway et al.
6 citations
ACS Applied Materials & Interfaces
Boron and Carbon Nanomaterials Research
0.70
article

Engineering Boron Vacancy Defects in Boron Nitride Nanotubes

Igor Aharonovich, Hiroshi Abe, Priya Singh, David A. Broadway, Mehran Kianinia, Jean‐Philippe Tetienne, Takeshi Ohshima, Hossein Alijani, Madeline Hennessey, Milos Toth, Benjamin Whitefield, Christopher Gavin
article en
6 citations

Abstract

Spin defects in hexagonal boron nitride (hBN) are emerging as promising platforms for quantum sensing applications. In particular, the negatively charged boron vacancy (<i>V</i><sub><i>B</i></sub><sup>-</sup>) centers have been engineered in bulk hBN and few-layer hBN flakes, and employed for sensing. Here, we investigate the engineering of <i>V</i><sub><i>B</i></sub><sup>-</sup> spin defects in boron nitride nanotubes (BNNTs). The generated spin defects are distributed along and around the BNNTs. Moreover, in contrast to hBN flakes, the spins in BNNTs exhibit a directional response relative to the direction of a surrounding magnetic field, which is consistent with the tubular geometry. The unique geometry of BNNTs allows for a more controlled and predictable placement of spin defects compared to bulk hBN, paving the way for innovative sensing applications with high spatial resolution and optomechanical studies of spin defects in hBN.

ACS Applied Materials & InterfacesVol. 16(42)
University of Technology Sydney (AU), National Institutes for Quantum Science and Technology (JP), ARC Centre of Excellence for Transformative Meta-Optical Systems (AU), RMIT University (AU)
Australian Research Council, Office of Naval Research Global
Openalex Percentile: Top 29%
Boron and Carbon Nanomaterials Research
0.70
DOISourceOpenAlex
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