A 0D Ge(II)-Halide-Based Perovskite with Enhanced Semiconducting Behavior for Electronic Capacitors

Perovskite materials have surged to the forefront of materials science, captivating researchers worldwide with their distinctive crystal lattice arrangement and remarkable optical, electric and dielectric attributes. The current study focuses on the development of a novel zero-dimensional (0D) Ge(II)-based hybrid perovskite, formulated as NH₃(CH₂)₂NH₃GeF₆, and synthesized through a gradual evaporation process conducted at room temperature. The crystal structure is characterized by an arrangement of organic cations and isolated octahedral [GeF₆]^2- groups. This configuration is stabilized by relatively weak intermolecular bonds. A comprehensive analysis of the material's thermal properties using differential scanning calorimetry (DSC) revealed a distinct phase transition occurring at approximately 323 K, which was further confirmed through electrical measurements. The studied compound provided a broad absorption range across the visible spectrum and an optical band gap of 3.30 eV, indicating its potential for semiconducting applications in optoelectronic devices. Photoluminescence PL analysis displays a blueish broad-band emission with a high color rendering index CRI value of 91, when excited at 325 nm. This emission primarily originates from the self-trapped excitons (STEs) recombination in the inorganic [GeF₆]^2-. Herein, the temperature-dependent behavior of grain conductivity exhibited an Arrhenius-type pattern, with an activation energy (<i>E</i> _a) of 0.46 eV, confirming the semiconductor nature of the investigated compound. In addition, a deep investigation of the alternating current conductivity, analyzed using Jonscher's law, demonstrates that the conduction mechanism is effectively described by the correlated barrier hopping (CBH) model. The dielectric performances show a significant dielectric constant (ε' ∼ 10³). Thus, all these interesting physical properties of this hybrid perovskite have paved the way for advancements in various technological applications, particularly in the field of electronic capacitors.