Investigation of Dynamic Eₒₛₛ in p-GaN Gate AlGaN/GaN HEMT

Dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {OSS}}$ </tex-math></inline-formula> of Schottky p-GaN gate GaN devices is investigated by a proposed novel circuit. The easy-to-implement circuit allows for the analysis of dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {OSS}}$ </tex-math></inline-formula> under different stress types, varied stress times and temperatures. It is observed that, the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {OSS}}$ </tex-math></inline-formula> is significantly reduced when the device is under continuous hard-switching stress (HSW) compared to devices subjected to OFF-state high voltage drain stress (HDC) and fresh devices, especially under relatively low bus voltage conditions (e.g., 100 V). These findings, linked to the dynamic change of 2DEG, provide new insights into Schottky p-GaN gate HEMT behavior and application understanding.