Solution-Processed CuSCN Films With Low Toxic and Environmentally Friendly Solvent for Efficient All-Inorganic CuInS₂ Solar Cells

Indium copper sulfide (CuInS<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}\text {)}$ </tex-math></inline-formula> has attracted considerable attention as an efficient and stable photon-absorbing material for inorganic heterojunction solar cells. Hole transport layer (HTL), serving as a hole extracting material, plays an integral role in determining device performance of solar cells. Here, the high-quality CuSCN film has been prepared successfully by using green mixed solution (dimethyl sulfoxide and dipropyl sulfide) and employed firstly to fabricate efficient CuInS2 planar heterojunction (PHJ) solar cells. The morphology, absorption properties, crystallinity and crystal orientation of CuSCN film are investigated by scanning electron microscopy (SEM), ultraviolet-visible spectroscopy (UV-vis) and X-ray diffraction (XRD) techniques. Results show the CuSCN film layer (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{c} = 100~^{\text {o}}$ </tex-math></inline-formula>C) suggests good crystallinity and superior transmittance. The champion CuInS2 PHJ solar cell with inorganic CuSCN HTM achieves an inspiring power conversion efficiency (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\eta \text {)}$ </tex-math></inline-formula> of 5.0% with the highest fill factor (FF) of 65.66% in the similar photovoltaic devices.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2024-10-10
DOI
https://doi.org/10.1109/led.2024.3477430
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

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article

Solution-Processed CuSCN Films With Low Toxic and Environmentally Friendly Solvent for Efficient All-Inorganic CuInS₂ Solar Cells

Wenbo Cao, Yang Wang, Mingtai Wang, Jiajin Kuang et al.
IEEE Electron Device Letters
Chalcogenide Semiconductor Thin Films
article

Solution-Processed CuSCN Films With Low Toxic and Environmentally Friendly Solvent for Efficient All-Inorganic CuInS₂ Solar Cells

Wenbo Cao, Yang Wang, Mingtai Wang, Jiajin Kuang, Rong Liu, Chong Chen, Junwei Chen
article en

Abstract

Indium copper sulfide (CuInS<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}\text {)}$ </tex-math></inline-formula> has attracted considerable attention as an efficient and stable photon-absorbing material for inorganic heterojunction solar cells. Hole transport layer (HTL), serving as a hole extracting material, plays an integral role in determining device performance of solar cells. Here, the high-quality CuSCN film has been prepared successfully by using green mixed solution (dimethyl sulfoxide and dipropyl sulfide) and employed firstly to fabricate efficient CuInS2 planar heterojunction (PHJ) solar cells. The morphology, absorption properties, crystallinity and crystal orientation of CuSCN film are investigated by scanning electron microscopy (SEM), ultraviolet-visible spectroscopy (UV-vis) and X-ray diffraction (XRD) techniques. Results show the CuSCN film layer (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{c} = 100~^{\text {o}}$ </tex-math></inline-formula>C) suggests good crystallinity and superior transmittance. The champion CuInS2 PHJ solar cell with inorganic CuSCN HTM achieves an inspiring power conversion efficiency (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\eta \text {)}$ </tex-math></inline-formula> of 5.0% with the highest fill factor (FF) of 65.66% in the similar photovoltaic devices.

IEEE Electron Device LettersVol. 45(12)
Hefei University of Technology (CN), Chinese Academy of Sciences (CN), Hefei Institutes of Physical Science (CN), Institute of Solid State Physics (CN)
National Natural Science Foundation of China
Responsible consumption and production
Openalex Percentile: Top 85%
Chalcogenide Semiconductor Thin Films
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