Single Event Effects of Low-Voltage N-Type and P-Type Trench-Gate MOSFET Devices

Silicon based MOSFETs are one of the most popular devices in electronic fields due to their electrical stability and mature system integration compared with other wide band-gap materials. Researches of total ionizing dose effect and single event effect on the radiation effects and radiation hardened approaches of planar-gate MOSFET devices are widely carried out. While mechanisms on irradiation effects of trench-gate MOSFET devices are still under research. To deeply understand the single event effects of trench-gate MOSFET devices, we fabricated four types of radiation hardened trench-gate MOSFET devices, two of which are N-type (30V and 60V) and the other two are P-type (30V and 55V). Different from planar-gate MOSFET devices, single event gate rupture of trench-gate MOSFET devices is less severe, due to the fact that the energy is weakened during the long path of the trench gate. After designing and fabricating novel SEE-hardened devices, SEE experimental results indicate that both the designed N-type and P-type fabricated trench-gate MOSFET devices can bear 75 MeV(mg/cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{2}}\text {)}$ </tex-math></inline-formula> at their separate <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\textit {BV}}_{\text {DSS}}$ </tex-math></inline-formula>. And all the single event safe operating areas are shown.