Enhancement of Device Uniformity in IWO TFTs via RF Magnetron Co-Sputtering of In <sub>2</sub> O <sub>3</sub> and WO <sub>3</sub> Targets
In this letter, the cause of the poor uniformity in indium tungsten oxide (IWO) thin-film transistors (TFTs) is investigated. The significant fluctuation in tungsten (W) content, which results from the non-uniformity of the IWO target, is responsible. To solve this problem, RF magnetron co-sputtering of In2O3 and WO3 targets is adopted to eliminate the variation of W content, thereby achieving high-uniformity IWO TFTs with enhanced performance. This co-sputtering methodology could shed light on the pathways for mitigating the device uniformity challenges encountered in mass production settings, thus leading to substantial cost reductions.
Authors
- Xiaoliang Zhou (ORCID: https://orcid.org/0000-0002-5430-1306)
- Yan Yan (ORCID: https://orcid.org/0000-0001-5404-5026)
- Meng Zhang (ORCID: https://orcid.org/0000-0002-9302-4057)
- Mingjun Zhang (ORCID: https://orcid.org/0000-0002-3595-7043)
- Paramasivam Balasubramanian
- Feilian Chen
- Zihan Wang (ORCID: https://orcid.org/0009-0005-4870-5012)
Institutions
- Shenzhen University (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-10-10
- DOI
- https://doi.org/10.1109/led.2024.3477443
- Citations
- 10
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 2.09