Impact of JL structure on analog/RF parameters and 6 T SRAM memory circuits of GNRFETs

Abstract The primary challenge in shrinking transistors is maintaining narrow source/drain (S/D) junctions with sharp doping gradients, necessitating advanced S/D and channel engineering techniques. The junctionless (JL) transistor design eliminates the need for junctions and doping gradients, simplifying manufacturing. This study uses process simulations to explore the impact of the JL configuration on the analog and radio frequency (RF) performance of double-gate (DG) graphene nanoribbon field-effect transistors (GNRFETs). The findings show that JL DG GNRFETs slightly outperform conventional DG GNRFETs, with a 15% increase in transconductance (g m ) and a 10.3% higher cut-off frequency (f T ). Additionally, the JL device exhibits a 16.2% higher gain-frequency product (GFP). The investigation employs self-consistent atomistic simulations within the non-equilibrium Green’s function (NEGF) framework, solving the Schrödinger equation under ballistic conditions. A high-performance hybrid 6 T static random-access memory (SRAM) is included to assess circuit-level variations and performance improvements.