Dual-gate AlGaN channel HEMTs: advancements in E-mode performance with N-shaped graded composite barriers

Abstract This work evaluates the performance of dual gate AlGaN channel HEMTs on SiC substrate. The study analyzes two HEMT structures that differ only in barrier design, one design consists of fixed composite barriers (FCB-HEMT) i.e. there is fixed Aluminum composition x = 0.48 in the first Al x Ga 1− x N barrier and x = 0.42 in the second Al x Ga 1−x N barrier while the other design comprises N-shaped graded composite barriers (NGCB-HEMT) i.e. the Aluminum content varies gradually from 0.4 to 0.48 in the first AlGaN barrier and from 0.34 to 0.42 in the second AlGaN barrier. The paper concentrates on energy band diagrams, electron concentration profile, electric field distribution, drain and transfer characteristics, and the effects of high temperature on drain characteristics and mobility of the NGCB-HEMT. It has been reported that at zero gate bias, the FCB-HEMT has a drain current density of 0.137 A mm −1 while it decreases to 0.0058 A mm −1 in the case of NGCB-HEMT, thus presenting a novel approach towards enhancement-mode AlGaN HEMTs. Hence, grading can be optimized in the composite barriers to achieve enhancement mode operation of AlGaN channel HEMTs. Furthermore, the study reveals that the critical electric field of FCB-HEMT is 6.9975 M V cm −1 , while that of NGCB-HEMT is 5.3124 M V cm −1 , demonstrating their usefulness in electronic devices that operate at high voltages and harsh temperatures. Moreover, at higher temperatures, the phenomenon of optical phonon scattering leads to decreased mobilities, which in turn causes low drain currents relative to the drain voltage.