4 inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

Abstract A high-quality AlN thick film with 11 μm thickness and low defect density was grown on a 4 inch hexagonal hole nano-patterned sapphire substrate by metal oxide chemical vapor deposition. The density of dislocation etch pits in the AlN heteroepitaxial film reached 1.1 × 10 7 cm −2 . The surface and microstrcutres of the AlN thick film were characterized in detail. The dislocation evolution mechanism and stress evolution of AlN were investigated. Dislocations were mainly generated at the interface between the sapphire and AlN, and the voids above the patterned region were generated by the undesirable grain boundaries caused by the lateral epitaxy of AlN and the substrate during the growth process, which prompted a large number of screw dislocations to bend and merge, and while some mixed dislocations to merge and extend upwards, resulting in a high-quality AlN thick film.

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Publication Details

Journal
Japanese Journal of Applied Physics
Published
2024-10-10
DOI
https://doi.org/10.35848/1347-4065/ad85b9
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

4 inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

Xu Yu, Lei Yao, Liang Wang, Ke Xu et al.
Japanese Journal of Applied Physics
GaN-based semiconductor devices and materials
article

4 inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

Xu Yu, Lei Yao, Liang Wang, Ke Xu, Guobin Wang, Yuning Wang, Jianxi Xu, Bing Cao, Shiping Guo, Jingjing Chen
article en

Abstract

Abstract A high-quality AlN thick film with 11 μm thickness and low defect density was grown on a 4 inch hexagonal hole nano-patterned sapphire substrate by metal oxide chemical vapor deposition. The density of dislocation etch pits in the AlN heteroepitaxial film reached 1.1 × 10 7 cm −2 . The surface and microstrcutres of the AlN thick film were characterized in detail. The dislocation evolution mechanism and stress evolution of AlN were investigated. Dislocations were mainly generated at the interface between the sapphire and AlN, and the voids above the patterned region were generated by the undesirable grain boundaries caused by the lateral epitaxy of AlN and the substrate during the growth process, which prompted a large number of screw dislocations to bend and merge, and while some mixed dislocations to merge and extend upwards, resulting in a high-quality AlN thick film.

Japanese Journal of Applied PhysicsVol. 63(11)
University of Science and Technology of China (CN), Chinese Academy of Sciences (CN), Suzhou University of Science and Technology (CN), Soochow University (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN), Advanced Micro-Fabrication Equipment (China) (CN), Shenyang University (CN)
National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, National Key Research and Development Program of China
Life in Land
Openalex Percentile: Top 90%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
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4 inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates — Xu Yu, Lei Yao, et al. · Japanese Journal of Applied Physics (2024) | TGRS Research Map | TGRS