Impact of modal gain and waveguide design on two-state lasing in quantum well-dot lasers
We study the current-controlled lasing switching from the ground state (GS) to the excited state (ES) transition in broad-area (stripe width 100 µm) InGaAs/GaAs quantum well-dot (QWD) and quantum well (QW) lasers. In the lasers with one QWD layer and a 0.45 µm-thick GaAs waveguide, pure GS lasing takes place up to an injection current as high as 8 A (40 kA/cm<sup>2</sup>). In contrast, in QW lasers with a similar design, ES lasing emerges already at 3 A (15 kA/cm<sup>2</sup>). The ES lasing in the QWD lasers is observed only in the devices with a waveguide thickness of 0.78 µm that supports a 2nd order transverse mode at the wavelength of the ES transition. Increasing the modal gain in the lasers with 0.78 µm-thick waveguide by using two QWD layers in the active region suppresses the ES lasing.
Authors
- G. O. Kornyshov (ORCID: https://orcid.org/0000-0001-5968-0862)
- F. I. Zubov (ORCID: https://orcid.org/0000-0002-3926-8675)
- M. V. Maximov (ORCID: https://orcid.org/0000-0002-9251-226X)
- N. Yu. Gordeev (ORCID: https://orcid.org/0000-0002-9919-4794)
- A. A. Kharchenko (ORCID: https://orcid.org/0000-0001-9686-2649)
- S. А. Mintairov (ORCID: https://orcid.org/0000-0002-6176-6291)
- Yu. M. Shernyakov
- A. A. Beckman (ORCID: https://orcid.org/0000-0002-3031-9165)
- Vladimir G. Dubrovskii (ORCID: https://orcid.org/0000-0003-2088-7158)
- A. S. Payusov (ORCID: https://orcid.org/0000-0001-7260-3001)
- N. А. Kalyuzhnyy (ORCID: https://orcid.org/0000-0001-8443-4663)
Institutions
- St Petersburg University (RU)
Publication Details
- Journal
- Optics Letters
- Published
- 2024-10-09
- DOI
- https://doi.org/10.1364/ol.532606
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.34
Funders
- Saint Petersburg State University
- Ministry of Science and Higher Education of the Russian Federation