Dual-mode 2 × 2 electro-optic switch on a SOI platform

Mode-division multiplexing (MDM) technology is promising for enhancing the capacity of communication networks. In this Letter, we demonstrate a dual-mode 2 × 2 electro-optical switch on a silicon-on-insulator platform. The dual-mode Mach-Zehnder interferometer switch comprises of four p-i-n phase shifters and two mode-insensitive multimode interferences that can be used for TE<sub>0</sub> and TE<sub>1</sub>, simultaneously. With π/2 phase shifters introduced, push-pull like operation enables the power consumption lower than 2.15 mW. The average insertion loss of the switch in "cross" and "bar" states are 1.31 dB ± 0.19 dB for the TE<sub>0</sub> mode and 3.39 dB ± 0.16 dB for the TE<sub>1</sub> mode, respectively. The cross talk is less than -16.47 dB in the C band. The compact dual-mode switch is promising to conduct a large-scale, flexible MDM system on chip.

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Publication Details

Journal
Optics Letters
Published
2024-10-09
DOI
https://doi.org/10.1364/ol.537380
Citations
6
Primary Topic
Optical Network Technologies
Type
article
Field-Weighted Citation Impact
1.25

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article

Dual-mode 2 × 2 electro-optic switch on a SOI platform

Yingzhi Ding, Xibin Wang, Daming Zhang, Shiyoshi Yokoyama et al.
6 citations
Optics Letters
Optical Network Technologies
1.25
article

Dual-mode 2 × 2 electro-optic switch on a SOI platform

Yingzhi Ding, Xibin Wang, Daming Zhang, Shiyoshi Yokoyama, Yuexin Yin, Peng Zhang, Fei Wang, Bo Tang
article en
6 citations

Abstract

Mode-division multiplexing (MDM) technology is promising for enhancing the capacity of communication networks. In this Letter, we demonstrate a dual-mode 2 × 2 electro-optical switch on a silicon-on-insulator platform. The dual-mode Mach-Zehnder interferometer switch comprises of four p-i-n phase shifters and two mode-insensitive multimode interferences that can be used for TE<sub>0</sub> and TE<sub>1</sub>, simultaneously. With π/2 phase shifters introduced, push-pull like operation enables the power consumption lower than 2.15 mW. The average insertion loss of the switch in "cross" and "bar" states are 1.31 dB ± 0.19 dB for the TE<sub>0</sub> mode and 3.39 dB ± 0.16 dB for the TE<sub>1</sub> mode, respectively. The cross talk is less than -16.47 dB in the C band. The compact dual-mode switch is promising to conduct a large-scale, flexible MDM system on chip.

Optics LettersVol. 49(21)
Kyushu University (JP), Chinese Academy of Sciences (CN)
National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 20%
Optical Network Technologies
1.25
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