Record-Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer

Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiO x -Ar ion source was initially applied to achieve an ultrathin interfacial layer. The simultaneous surface activation and slow deposition of the SiO x binder layer enabled precise control over layer thickness (2.5–5.3 nm) and formation of an amorphous heterogeneous nanostructure comprising a SiO x region between two inter-diffusion regions. Crucially, the 2.5-nm-thick interfacial layer achieved a TBR of 8.3 m 2 ⋅K/GW, a record low for direct-bonded GaN/diamond interface. A remarkable feature is that the TBR is extremely sensitive to the interfacial thickness; Varying from 8.3 m 2 ⋅K/GW to 34 m 2 ⋅K/GW with thickness difference of only 2.8 nm. Theoretical analysis revealed the origin of this phenomena: a diamond/SiO x inter-diffusion layer extend the vibrational frequency, far exceeding that of crystalline diamond, which increases the lattice vibrational mismatch and suppresses phonon transmission.