A Study of the Space Charge-Limited Injection Currents in TiO2-Based Thin-Film Metal-Dielectric Structures

Space charge-limited currents in Ti–TiO2 thin-film structures have been studied. Using the experimental physical parameters of the TiO2 dielectric, models of the formation of the space charge-limited injection currents have been constructed. The dependences of the injection current on the applied voltage, dielectric layer thickness, and parameters of electron traps have been explored. It is shown that the space charge-limited injection currents in the investigated structures depend significantly on both the depth and concentration of traps. The results obtained are compared with the dependences obtained previously for the BeO, Al2O3, and AlN structures.

Authors

Institutions

Publication Details

Journal
Inorganic Materials Applied Research
Published
2024-10-01
DOI
https://doi.org/10.1134/s2075113324700850
Citations
3
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.63
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A Study of the Space Charge-Limited Injection Currents in TiO2-Based Thin-Film Metal-Dielectric Structures

В. В. Андреев, D. K. Nikiforov, Г. Г. Бондаренко
3 citations
Inorganic Materials Applied Research
Semiconductor materials and devices
0.63
article

A Study of the Space Charge-Limited Injection Currents in TiO2-Based Thin-Film Metal-Dielectric Structures

В. В. Андреев, D. K. Nikiforov, Г. Г. Бондаренко
article en
3 citations

Abstract

Space charge-limited currents in Ti–TiO2 thin-film structures have been studied. Using the experimental physical parameters of the TiO2 dielectric, models of the formation of the space charge-limited injection currents have been constructed. The dependences of the injection current on the applied voltage, dielectric layer thickness, and parameters of electron traps have been explored. It is shown that the space charge-limited injection currents in the investigated structures depend significantly on both the depth and concentration of traps. The results obtained are compared with the dependences obtained previously for the BeO, Al2O3, and AlN structures.

Inorganic Materials Applied ResearchVol. 15(5)
National Research University Higher School of Economics (RU), Bauman Moscow State Technical University (RU)
Affordable and clean energy
Openalex Percentile: Top 31%
Semiconductor materials and devices
0.63
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.