Efficient Silicon Solar Cells with Aluminum‐Doped Zinc Oxide‐Based Passivating Contact

Abstract Crystalline silicon ( c ‐Si) solar cells require passivating contacts to unlock their full efficiency potential. For this doped silicon layers are the materials of choice, as they yield device voltages close to the thermodynamic limit. Yet, replacing such layers with wide‐bandgap metal oxides may be advantageous from a cost perspective and minimize parasitic optical absorption. Here the aluminum‐doped zinc oxide (AZO)‐based passivating contacts with high electron selectivity are presented. The SiO 2 /AZO/Al 2 O 3 stack is demonstrated to provide excellent surface passivation on c ‐Si (implied V oc up to 742 mV) after thermal annealing, and an average contact resistivity of 51 mΩ cm 2 is simultaneously obtained after etching off Al 2 O 3 capping layer. By the implementation of AZO‐based electron‐selective contact, a champion power conversion efficiency (PCE) of 24.3% is achieved on c ‐Si solar cells, representing the PCE record for metal oxide‐based passivating contacts. Finally, the efficiency potential, cost, and industrial compatibility of the AZO‐based electron‐selective contacts are discussed, paving the way for industrial applications.

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Publication Details

Journal
Advanced Functional Materials
Published
2024-10-07
DOI
https://doi.org/10.1002/adfm.202415039
Citations
25
Primary Topic
Silicon and Solar Cell Technologies
Type
article
Field-Weighted Citation Impact
5.22

Funders

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article

Efficient Silicon Solar Cells with Aluminum‐Doped Zinc Oxide‐Based Passivating Contact

Daliang Zhang, Fengxian Cao, Yan Tong, Chunfang Xing et al.
25 citations
Advanced Functional Materials
Silicon and Solar Cell Technologies
5.22
article

Efficient Silicon Solar Cells with Aluminum‐Doped Zinc Oxide‐Based Passivating Contact

Daliang Zhang, Fengxian Cao, Yan Tong, Chunfang Xing, Dacheng Xu, Xinbo Yang, Cao Yu, Wei Shi, Stefaan De Wolf, Xinyu Wang, Wenhao Li, Kun Li, Jing Wang, Wu Zhao, Yujiao Wang, Kun Gao, Shibo Wang, Hong Lin, Xiao­hong Zhang, Yifan Diao, Xinliang Lou, Qunyu Bi, Junjie Xie
article en
25 citations

Abstract

Abstract Crystalline silicon ( c ‐Si) solar cells require passivating contacts to unlock their full efficiency potential. For this doped silicon layers are the materials of choice, as they yield device voltages close to the thermodynamic limit. Yet, replacing such layers with wide‐bandgap metal oxides may be advantageous from a cost perspective and minimize parasitic optical absorption. Here the aluminum‐doped zinc oxide (AZO)‐based passivating contacts with high electron selectivity are presented. The SiO 2 /AZO/Al 2 O 3 stack is demonstrated to provide excellent surface passivation on c ‐Si (implied V oc up to 742 mV) after thermal annealing, and an average contact resistivity of 51 mΩ cm 2 is simultaneously obtained after etching off Al 2 O 3 capping layer. By the implementation of AZO‐based electron‐selective contact, a champion power conversion efficiency (PCE) of 24.3% is achieved on c ‐Si solar cells, representing the PCE record for metal oxide‐based passivating contacts. Finally, the efficiency potential, cost, and industrial compatibility of the AZO‐based electron‐selective contacts are discussed, paving the way for industrial applications.

Advanced Functional MaterialsVol. 35(4)
Chongqing University (CN), Soochow University (CN), King Abdullah University of Science and Technology (SA)
National Natural Science Foundation of China, Collaborative Innovation Center of Suzhou Nano Science and Technology, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 4%
Silicon and Solar Cell Technologies
5.22
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