Optimizing Forward Drop and Reverse Leakage Trade‐Off in AlGaN/GaN Lateral Diode with Schottky‐Metal‐Insulator‐Semiconductor Cascode Anode

Herein, AlGaN/GaN lateral diode with the Schottky‐Metal‐Insulator‐Semiconductor (MIS) cascode anode (CALD) to optimize forward voltage drop ( V F ) and reverse leakage current ( I LEAK ) trade‐off is proposed. In the CALD device, a normally‐on Ni/HfO 2 /AlGaN MIS‐controlled channel as well as a lateral Ni/GaN Schottky contact are cascoded at the anode. The designed normally‐on MIS‐controlled channel has high electron concentration at forward bias and prevents high electric‐field at reverse bias, which ensure both low V F and low I LEAK . Meanwhile, the Ni/GaN Schottky contact with a high Schottky barrier height further suppresses the I LEAK . As a result, the fabricated CALD demonstrates an optimized V F – I LEAK trade‐off relationship, including a low V F of 1.6 V and a low I LEAK of 5.2 × 10 −8 A mm −1 (at reverse voltage of 400 V), together with a high breakdown voltage (BV) >700 V. These high performances suggest that the CALD can be a promising candidate for GaN power diode applications requiring a better V F – I LEAK trade‐off.

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Publication Details

Journal
physica status solidi (a)
Published
2024-10-08
DOI
https://doi.org/10.1002/pssa.202400338
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Optimizing Forward Drop and Reverse Leakage Trade‐Off in AlGaN/GaN Lateral Diode with Schottky‐Metal‐Insulator‐Semiconductor Cascode Anode

Ping Yu, Zeheng Wang, Peng Zuo, Cheng Yu et al.
physica status solidi (a)
GaN-based semiconductor devices and materials
article

Optimizing Forward Drop and Reverse Leakage Trade‐Off in AlGaN/GaN Lateral Diode with Schottky‐Metal‐Insulator‐Semiconductor Cascode Anode

Ping Yu, Zeheng Wang, Peng Zuo, Cheng Yu, Wanjun Chen, Zhuocheng Wang, Xiaohui Wang, Yang Wang, Hong Chen, Haiqiang Jia, Guojian Ding, Chang Gao, Fangzhou Wang, Qi Feng, Bo Zhang
article en

Abstract

Herein, AlGaN/GaN lateral diode with the Schottky‐Metal‐Insulator‐Semiconductor (MIS) cascode anode (CALD) to optimize forward voltage drop ( V F ) and reverse leakage current ( I LEAK ) trade‐off is proposed. In the CALD device, a normally‐on Ni/HfO 2 /AlGaN MIS‐controlled channel as well as a lateral Ni/GaN Schottky contact are cascoded at the anode. The designed normally‐on MIS‐controlled channel has high electron concentration at forward bias and prevents high electric‐field at reverse bias, which ensure both low V F and low I LEAK . Meanwhile, the Ni/GaN Schottky contact with a high Schottky barrier height further suppresses the I LEAK . As a result, the fabricated CALD demonstrates an optimized V F – I LEAK trade‐off relationship, including a low V F of 1.6 V and a low I LEAK of 5.2 × 10 −8 A mm −1 (at reverse voltage of 400 V), together with a high breakdown voltage (BV) >700 V. These high performances suggest that the CALD can be a promising candidate for GaN power diode applications requiring a better V F – I LEAK trade‐off.

physica status solidi (a)Vol. 222(3)
University of Electronic Science and Technology of China (CN), Southern University of Science and Technology (CN), Songshan Lake Materials Laboratory (CN), National Engineering Research Center of Electromagnetic Radiation Control Materials (CN), CSIRO Manufacturing (AU)
Commonwealth Scientific and Industrial Research Organisation, National Natural Science Foundation of China, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 90%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
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