Optoelectronic stimuli-driven switchable memristors with multilevel resistance states for neuromorphic vision sensors

The developed optoelectronic synaptic devices with resistive switching enable efficient, fault-resistant image recognition. The PMMA/ZnO/2IF memristor array advances neuromorphic vision systems, offering high accuracy and low power consumption.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2024-10-08
DOI
https://doi.org/10.1039/d4tc01796j
Citations
6
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
1.25

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article

Optoelectronic stimuli-driven switchable memristors with multilevel resistance states for neuromorphic vision sensors

Yu‐Wu Wang, Menglin Chen, Sreeshyam Adat, S. Pravinraj
6 citations
Journal of Materials Chemistry C
Advanced Memory and Neural Computing
1.25
article

Optoelectronic stimuli-driven switchable memristors with multilevel resistance states for neuromorphic vision sensors

Yu‐Wu Wang, Menglin Chen, Sreeshyam Adat, S. Pravinraj
article en
6 citations

Abstract

The developed optoelectronic synaptic devices with resistive switching enable efficient, fault-resistant image recognition. The PMMA/ZnO/2IF memristor array advances neuromorphic vision systems, offering high accuracy and low power consumption.

Journal of Materials Chemistry CVol. 13(1)
National Changhua University of Education (TW)
National Science and Technology Council
Openalex Percentile: Top 20%
Advanced Memory and Neural Computing
1.25
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