Comparison of Analog Performance between Si Junctionless FinFET, Si Conventional FinFET, Tunnel FET, and InGaAs MOSFET

The following article presents a comparative analysis of the analog performance amid Si junctionless (JL) FinFET, traditional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET. To do this work, a numerical device simulator has been applied. Our investigation reveals that although InGaAs MOSFET shows highest transconductance, particularly at higher VGS, TFET produces the highest intrinsic gain at relatively lower VGS values. Even though its transconductance is lower, JL FinFET produces the highest gain at higher VGS values due to its low drain conductance in spite of its low transconductance.