Vanadium Dioxide (VO<sub>2</sub>) Based Wideband Tunable Terahertz Metamaterial Polarization-Insensitive Absorber

In this presented research paper, the proposed design of a wideband tunable terahertz (THz) absorber using the phase-changing material VO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>. The absorber has a wide bandwidth of 76.2% from 3.70 to 8.25 THz with an absorption level of more than 95%. For oblique incidents, the THz wave has an absorption level of more than 65% up to 60° incident angles. Due to the presence of the symmetry of the structure, it exhibits polarization-insensitive characteristics for both TE and TM THz-wave. Moreover, by changing the phase of VO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> from insulator to conductor 200 to 2×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> S/m with temperature, the absorption level can be varied from 2% to 98% under the wideband. The proposed absorber could be useful in absorber devices for terahertz technology in fields such as energy harvesting, imaging and security.

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Published
2024-08-08
DOI
https://doi.org/10.1109/icecsp61809.2024.10698016
Primary Topic
Metamaterials and Metasurfaces Applications
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article
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article

Vanadium Dioxide (VO2) Based Wideband Tunable Terahertz Metamaterial Polarization-Insensitive Absorber

Ashwani Kumar, Shatish K. Gautam, SavithaB Naik
Metamaterials and Metasurfaces Applications
article

Vanadium Dioxide (VO2) Based Wideband Tunable Terahertz Metamaterial Polarization-Insensitive Absorber

Ashwani Kumar, Shatish K. Gautam, SavithaB Naik
article en

Abstract

In this presented research paper, the proposed design of a wideband tunable terahertz (THz) absorber using the phase-changing material VO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>. The absorber has a wide bandwidth of 76.2% from 3.70 to 8.25 THz with an absorption level of more than 95%. For oblique incidents, the THz wave has an absorption level of more than 65% up to 60° incident angles. Due to the presence of the symmetry of the structure, it exhibits polarization-insensitive characteristics for both TE and TM THz-wave. Moreover, by changing the phase of VO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> from insulator to conductor 200 to 2×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> S/m with temperature, the absorption level can be varied from 2% to 98% under the wideband. The proposed absorber could be useful in absorber devices for terahertz technology in fields such as energy harvesting, imaging and security.

University of Delhi (IN), Jawaharlal Nehru University (IN)
Openalex Percentile: Top 90%
Metamaterials and Metasurfaces Applications
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