Performance Evaluation of Ge-Source Dielectrically Modulated TFET

This study investigates a Germanium source dielectrically-modulated double gate TFET biosensor for identifying charged and uncharged biomolecules. Through dielectric modulation, biomolecules are immobilized in TFET nanogap cavities for label-free identification. Performance evaluation metrics including Drain current sensitivity, Sub-threshold Swing, Ion, Ion/Ioff, and Threshold voltage are employed. Silvaco TCAD simulations analyze the device's capabilities. The study demonstrates the potential of this biosensor for accurate biomolecule identification, offering a promising avenue for bioanalytical applications.

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Publication Details

Published
2024-08-08
DOI
https://doi.org/10.1109/icecsp61809.2024.10698660
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
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article

Performance Evaluation of Ge-Source Dielectrically Modulated TFET

Neha Paras, Manisha Bharti, Pooja Raghav
Advancements in Semiconductor Devices and Circuit Design
article

Performance Evaluation of Ge-Source Dielectrically Modulated TFET

Neha Paras, Manisha Bharti, Pooja Raghav
article en

Abstract

This study investigates a Germanium source dielectrically-modulated double gate TFET biosensor for identifying charged and uncharged biomolecules. Through dielectric modulation, biomolecules are immobilized in TFET nanogap cavities for label-free identification. Performance evaluation metrics including Drain current sensitivity, Sub-threshold Swing, Ion, Ion/Ioff, and Threshold voltage are employed. Silvaco TCAD simulations analyze the device's capabilities. The study demonstrates the potential of this biosensor for accurate biomolecule identification, offering a promising avenue for bioanalytical applications.

Jawaharlal Nehru University (IN), National Institute of Technology Delhi (IN)
Affordable and clean energy
Openalex Percentile: Top 85%
Advancements in Semiconductor Devices and Circuit Design
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