Performance Comparison of Antimony with Group III Compounded Semiconductor Based JLTFET
This report deals with the impact of compound semiconductor material where antimony (group V) material has been mixed with group III materials i.e., aluminum, gallium, and indium on junctionless tunnel field-effect transistor (JLTFET). A performance comparison has been done to understand the impact of increasing higher or lower bandgap material on the electrical performance of the device. The comparative analysis has been carried out considering several figures-of-merits like potential distribution profile, bandgap fluctuations, electric field profile, electron concentration, and the transfer characteristics of the device. The report also shows the contour diagram of potential drop and electron concentration distribution along the channel of the device.
Authors
- Md Akram Ahmad (ORCID: https://orcid.org/0000-0003-2209-3773)
- Pankaj Kumar Sharma (ORCID: https://orcid.org/0000-0001-5030-2312)
- Pankaj Kumar (ORCID: https://orcid.org/0000-0001-7172-5541)
- Aradhana Mohanty
- Sagar Sagar
Institutions
- Indian Institute of Technology Dhanbad (IN)
- Graphic Era University (IN)
- Vellore Institute of Technology University (IN)
- National Institute of Technology Srinagar (IN)
Publication Details
- Published
- 2024-08-08
- DOI
- https://doi.org/10.1109/icecsp61809.2024.10698254
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00