Exploring MOSFET Differential Amplifiers: Using TCAD and Multisim Applications

The investigation is conducted on the Silicon gate all around (Si-GAA) MOSFET with the help of 3D-ATLAS TCAD simulator. This study reveals that the Si-GAA MOSFET outperforms the other planar structures, showcasing a V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> of 0.40 V, an I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> of 0.326 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">–3</sup> A, I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> of 5.9 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">–13</sup> A, and an I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> current ratio of 5.52 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup>. Moreover, it exhibits a SS of 63.4 mV/dec with barrier lowering effect of 26.25 mV/V which make it a suitable candidate to be used in amplification application. For the amplification purpose a differential amplifier is designed using Multisim by utilizing the parameters found from the above simulated model. It is found that the prosed model shows good amplification as compared to the inbuilt MOSFET model preset in Multisim simulator.