Optimization of Dielectric Modulated TFET as a Label free Biosensor

This work presents a label-free biosensor based on tunnel field effect transistors and using the concepts of dielectric modulation and charge plasma. Material from the gate oxide underlying the source electrode is removed for the nanogap cavity's creation, the biomolecules of interest are modelled within the nanogap cavity. Hereditary characteristics of the biomolecules, like the dielectric constant and charge density are used to identify them. The presence of a biomolecule within the nanogap cavity modifies the device's capacitance, electric field, and electrostatic potential, which in turn modifies the threshold voltage and drain current. Through the measurement of the drain current and threshold voltage change, the device's sensitivity is assessed. Using a low bandgap material result in a reduction in tunnelling width and an increase in TFET ON current. The effectiveness of the suggested devices is examined with respect to band energy, electric field, and sensitivity at various biomolecule dielectric constant (K) values. In addition to being label-free biosensors, the proposed devices have low heat budgets, are compatible with silicon technology, and are free from random dopant fluctuation.