Performance Analysis of Nitrides with Group III based Semiconductor in JLTFET Device

This work presents a numerical analysis of nitride (group V) material with group III materials to make a compound semiconductor material are being used as a body material in junctionless tunnel field-effect-transistor (JLTFET). The semiconductor material that has been used in the body of the JLTFET device are AlN, GaN, and InN. The compound semiconductor materials are mostly wide bandgap materials that has higher mobility than silicon material. The comparative analysis has been carried out considering several figures-of-merits like transfer characteristics, potential distribution profile, bandgap fluctuations, electric field drop, and electron concentrations. Futhermore, the electron concentration and potential drop across the channel have been examined by plotting the contour diagram of the device.