Performance Analysis of GaSb/InAs Heterojunction TFET for Gas Sensing Applications

In this study, a GaSb/InAs heterojunction TFET gas sensor is proposed to sense various gases. The motivation behind this work is improved sub-threshold slope and ON current resulting in better sensitivity by using a heterojunction TFET structure. Also, the multifaceted influence of oxide thickness on the energy band diagram and transfer characteristics of proposed device is investigated. The study systematically explores how varying the oxide thickness alters the energy band diagram and affects the transfer characteristics of the proposed gas sensor. Additionally, the research delves into the temperature variation of the proposed gas sensor, examining its impact on device performance. By analysing the interplay between oxide thickness, energy band diagram, and temperature, the study aims to impart comprehensive insights into the optimization and understanding of TFET-based gas sensor functionality.