Numerical Analysis for Modeling Copper Indium Gallium Selenide-based Solar Cells with Varying Absorber Layer Defect Density

The semiconductors used to construct solar cells are the result of extensive research and development efforts. Currently, the substrate of choice is photovoltaic (PV) cells manufactured from silicon (Si), which accounts for more than 80% of global production. Due to their costly operation and production process, other compounds based on the CIS family seem superior to Si. Certain materials may largely absorb the sun's rays. In addition, CIGS has reached a new level of efficiency; it is with these materials that thin-film technologies can achieve their peak PCE. To maximize the efficiency of photovoltaic cells, use the SCAPS tool. This research takes CIGS-based PV cells and steps up or down the bulk defect density (N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf>) by 8 equal amounts, from 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> to 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">19</sup> cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−3</sup>. The PV performance measures show a clear improvement at a fault level of 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup>cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−3</sup>. A 22.90% PCE, 0.64V Voc, 82.9% FF, and 43.01 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>Jsc are all present. The importance of N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf>on solar cells is highlighted by these results, which provide useful information for the development and improvement of CIGS-based PV cells. This abstract highlight the innovative elements of your study, particularly the systematic enhancement of defect density in CIGS-based PV cells and its substantial influence on enhancing their efficiency.

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Published
2024-08-08
DOI
https://doi.org/10.1109/icecsp61809.2024.10698710
Primary Topic
Silicon and Solar Cell Technologies
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article

Numerical Analysis for Modeling Copper Indium Gallium Selenide-based Solar Cells with Varying Absorber Layer Defect Density

Jaya Madan, Savita Rawat
Silicon and Solar Cell Technologies
article

Numerical Analysis for Modeling Copper Indium Gallium Selenide-based Solar Cells with Varying Absorber Layer Defect Density

Jaya Madan, Savita Rawat
article en

Abstract

The semiconductors used to construct solar cells are the result of extensive research and development efforts. Currently, the substrate of choice is photovoltaic (PV) cells manufactured from silicon (Si), which accounts for more than 80% of global production. Due to their costly operation and production process, other compounds based on the CIS family seem superior to Si. Certain materials may largely absorb the sun's rays. In addition, CIGS has reached a new level of efficiency; it is with these materials that thin-film technologies can achieve their peak PCE. To maximize the efficiency of photovoltaic cells, use the SCAPS tool. This research takes CIGS-based PV cells and steps up or down the bulk defect density (N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf>) by 8 equal amounts, from 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> to 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">19</sup> cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−3</sup>. The PV performance measures show a clear improvement at a fault level of 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup>cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−3</sup>. A 22.90% PCE, 0.64V Voc, 82.9% FF, and 43.01 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>Jsc are all present. The importance of N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf>on solar cells is highlighted by these results, which provide useful information for the development and improvement of CIGS-based PV cells. This abstract highlight the innovative elements of your study, particularly the systematic enhancement of defect density in CIGS-based PV cells and its substantial influence on enhancing their efficiency.

Chitkara University (IN)
Affordable and clean energy
Openalex Percentile: Top 85%
Silicon and Solar Cell Technologies
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