ESD Robustness of Germanium Photodetectors in Advanced Silicon Photonics Technology
A comprehensive ESD robustness study of 5 different Ge photodetectors in advanced Si photonic technology is presented. The measurement results disclose that the main impact on the ESD transient IV characteristics is from the contact location of the anode terminal. Still, the failure mechanisms need to be further clarified by physical failure analysis as a part of the future work.
Authors
- Wen-Chieh Chen (ORCID: https://orcid.org/0000-0002-1298-6693)
- Shih‐Hung Chen (ORCID: https://orcid.org/0000-0002-6481-2951)
- K. Croes
- Yuseok Ban (ORCID: https://orcid.org/0000-0003-1190-6863)
- Solomon Musibau (ORCID: https://orcid.org/0000-0002-7790-8530)
- P. P. Absil
- Kuo-Hsing Kao (ORCID: https://orcid.org/0000-0003-0137-2466)
- Myriam Van De Peer
- Artemisia Tsiara (ORCID: https://orcid.org/0000-0002-5612-6468)
- K. Serbulova
- Joris Van Campenhout (ORCID: https://orcid.org/0000-0003-0778-2669)
- Marko Simicic (ORCID: https://orcid.org/0000-0002-3623-1842)
- P.-Y. Fu
Institutions
- IMEC (BE)
- National Cheng Kung University (TW)
- KU Leuven (BE)
Publication Details
- Published
- 2024-09-16
- DOI
- https://doi.org/10.23919/eos/esd61719.2024.10702103
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00